MSD42WT1 |
Part Number | MSD42WT1 |
Manufacturer | Motorola |
Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSD42WT1/D Preliminary Information NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Tra... |
Features |
TER
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IE = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter –Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 1.0 mAdc) (VCE = 10 Vdc, IC = 30 mAdc) Collector-Emitter Saturation Voltage(2) (IC = 200 mAdc, IB = 2.0 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) Min 300 300 6.0 — — 25 40 — Max — — — 0.1 0.1 — — 0.5 Vdc Unit ... |
Document |
MSD42WT1 Data Sheet
PDF 91.85KB |
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