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Motorola |
PNP General Purpose Amplifier Transistor Surface Mount |
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Motorola |
PNP General Purpose Amplifier Transistor Surface Mount |
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Motorola |
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT on(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS Characteristic Collector –Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector –Base Breakdown Voltage (IC |
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Motorola |
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT on(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS Characteristic Collector –Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector –Base Breakdown Voltage (IC |
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Motorola Semiconductor Products |
Small Signal Plastic Pnp –10 Vdc, IB = 0) DC Current Gain(1) (VCE = –10 Vdc, IC = – 2.0 mAdc) Collector –Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min – |
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Desde 2024. D4U Semiconductor.
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