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MSB709-RT1 |
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| Part Number | MSB709-RT1 |
| Manufacturer | Motorola Semiconductor Products |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSB709–RT1/D PNP General Purpose Amplifier Transistor Surface Mount COLLECTOR 3 MSB709-RT1 Motorola Preferred Device 3 2 1 2 BASE 1 ... |
| Features |
–10 Vdc, IB = 0) DC Current Gain(1) (VCE = –10 Vdc, IC = – 2.0 mAdc) Collector –Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min – 45 – 60 – 7.0 — — 210 — Max — — — – 0.1 –100 340 – 0.5 Unit Vdc Vdc Vdc µAdc nAdc — Vdc DEVICE MARKING Marking Symbol ARX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended... |
| Document |
 MSB709-RT1 Data Sheet
PDF 108.66KB |
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Desde 2024. D4U Semiconductor.
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