Motorola MGY Hoja de datos

No.	parte #	Fabricante	Descripción
1	MGY40N60	Motorola	Insulated Gate Bipolar Transistor llector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junc
2	MGY25N120	Motorola	Insulated Gate Bipolar Transistor er Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand
3	MGY20N120D	Motorola	Insulated Gate Bipolar Transistor with Anti-Parallel Diode Robust RBSOA C IGBT & DIODE IN TO –264 20 A @ 90°C 28 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340G –02, Style 5 TO –264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE =
4	MGY30N60D	Motorola	Insulated Gate Bipolar Transistor with Anti-Parallel Diode bust RBSOA C IGBT & DIODE IN TO –264 30 A @ 90°C 50 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340G –02, Style 5 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0
5	MGY40N60D	Motorola	Insulated Gate Bipolar Transistor with Anti-Parallel Diode bust RBSOA C IGBT & DIODE IN TO –264 40 A @ 90°C 66 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED G E G C E CASE 340G –02, Style 5 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.
6	MGY25N120D	Motorola	Insulated Gate Bipolar Transistor with Anti-Parallel Diode Robust RBSOA C IGBT & DIODE IN TO –264 25 A @ 90°C 38 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED G E G C E CASE 340G –02, Style 5 TO –264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE =