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MGY20N120D |
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| Part Number | MGY20N120D |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY20N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N... |
| Features |
Robust RBSOA
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IGBT & DIODE IN TO –264 20 A @ 90°C 28 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340G –02, Style 5 TO –264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Ju... |
| Document |
 MGY20N120D Data Sheet
PDF 254.77KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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