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| Part Number | MGY20N120D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MGY20N120D |
| Manufacturer | ON |
| Title | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY20N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged . |
| Features |
Robust RBSOA
IGBT & DIODE IN TO –264 20 A @ 90°C 28 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED C G C E G E CASE 340G –02 STYLE 5 TO –264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Pow. |
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Desde 2024. D4U Semiconductor.
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