| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Motorola |
Insulated Gate Bipolar Transistor r−Gate Voltage (RGE = 1.0 MΩ) Gate−Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) VCES VCGR VGE IC25 IC90 ICM 1200 Vdc 1200 Vdc ±20 Vdc 28 Adc 20 56 Apk To |
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Motorola |
Insulated Gate Bipolar Transistor Soft Recovery Free Wheeling Diode is included in the Package • Robust High Voltage Termination • ESD Protection Gate –Emitter Zener Diodes C MGW21N60ED IGBT IN TO –247 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON –VOLTAGE G G C E E CASE |
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Motorola |
Insulated Gate Bipolar Transistor ollector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate |
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Motorola |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
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Motorola |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
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Motorola |
Insulated Gate Bipolar Transistor or –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Opera |
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Desde 2024. D4U Semiconductor.
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