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MGW20N120 |
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| Part Number | MGW20N120 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N−Channel Enhancement−Mode Silicon Gate This Insulated Gate Bipolar ... |
| Features |
r−Gate Voltage (RGE = 1.0 MΩ)
Gate−Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1)
VCES
VCGR
VGE
IC25 IC90 ICM
1200
Vdc
1200
Vdc
±20
Vdc
28
Adc
20
56
Apk
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
174
Watts
1.39
W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case − IGBT — Junction to Ambient
TJ, Tstg tsc
RθJC RθJA
−55 to 150 10
0.7 35
°C ms
°C/W
Maximum Lead... |
| Document |
 MGW20N120 Data Sheet
PDF 104.86KB |
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