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MGW12N120 Insulated Gate Bipolar Transistor


MGW12N120
Part Number MGW12N120
Distributor Stock Price Buy
Motorola
MGW12N120
Part Number MGW12N120
Manufacturer Motorola
Title Insulated Gate Bipolar Transistor
Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking.
Features ollector
  –Gate Voltage (RGE = 1.0 MΩ) Gate
  –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal .

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