Motorola 2N8 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N840	Motorola	NPN silicon annular transistors mitter Cutoff Current (VBE = 2.0 Vdc, IC = 0) Symbol Min BVCEO 45 BVCBO 45 BVEBO 2.0 ICER - ICBO - - lEBO - Max - 20 1.0 50 50 ON CHARACTERISTICS DC Current Gain (Ie = 10 mAdc, VeE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC" 10 m
2	2N835	Motorola	NPN silicon epitaxial transistors INC TIME TEST SET OR EQUIVALENT. 2N834, 2N835 (continued) ELECTRICAL CHARACTERISTICS (TA'i= 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 j.l.Adc, ~ = 0) Emitter-Base Breakdown Voltage (
3	2N834	Motorola	NPN silicon epitaxial transistors INC TIME TEST SET OR EQUIVALENT. 2N834, 2N835 (continued) ELECTRICAL CHARACTERISTICS (TA'i= 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 j.l.Adc, ~ = 0) Emitter-Base Breakdown Voltage (
4	2N829	Motorola	PNP germanium epitaxial mesa transistors 2.5 Vdc Collector Current (ContinUous) IC 200 mAdc Total Device Dissipation at 25"C case PD 300 mW Temperature (Derate 4. Omw;oC above 25 ·C) Total Device Dissipation at 25"C . PD 150 mW Ambient Temperature (Derate 2. Omw/ ·C) Junction
5	2N828A	Motorola	PNP germanium epitaxial mesa transistors 2.5 Vdc Collector Current (ContinUous) IC 200 mAdc Total Device Dissipation at 25"C case PD 300 mW Temperature (Derate 4. Omw;oC above 25 ·C) Total Device Dissipation at 25"C . PD 150 mW Ambient Temperature (Derate 2. Omw/ ·C) Junction
6	2N827	Motorola	PNP germanium mesa transistor lAdc, VEB=O) BVCBO BVCES 20 22 20 22 Vdc --- --- Vdc Emitter-Base Breakdown Voltage (IE= 100 tlAdc, Ie= 0) Collector Latch-up Voltage BV EBO LV CEX --- Ydc 4 5.0 --- 10 ....... Ydc Collector-Emitter Cutoff Current (VCE =15 Vdc, VEB =0) ICES
7	2N841	Motorola	NPN silicon annular transistors mitter Cutoff Current (VBE = 2.0 Vdc, IC = 0) Symbol Min BVCEO 45 BVCBO 45 BVEBO 2.0 ICER - ICBO - - lEBO - Max - 20 1.0 50 50 ON CHARACTERISTICS DC Current Gain (Ie = 10 mAdc, VeE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC" 10 m
8	2N838	Motorola	PNP germanium epitaxial mesa transistor = 25°C unless otherwise notedl Characteristic Collector-Base Breakdown Voltage (Ic =100 fJ.Adc, IE =0) Collector-Emitter Breakdown Voltage (IC=100 J1Adc, VEB=O) Emitter-Base Breakdown Voltage (IE = 100 fJ. Adc, IC = 0) Collector Latch-up Voltage (se
9	2N828	Motorola	PNP germanium epitaxial mesa transistor DJUST FOR Ie :::: 10mA) I... == _0.10mA 1..,= +IOmA Ie :::: -IOmA 2-100 2N828 (continued) FIGURE 3 - RISE TIME FACTOR SKL MODEL 503 PULSE GENERATOR INPUT WAVEFORM 3K HFR Sill HFR FIGURE 4 - STORAGE AND FALL TIME TEST CIRCUIT OBSERVE + 1.05V
10	MTP2N85	Motorola	Power MOSFET
11	MCM32N864	Motorola	256KB Secondary Cache Module able, Bank Output Enable • Decoupling Capacitors are Used for Each Fast Static RAM • High Quality Multi –Layer FR4 PWB With Separate Power and Ground Planes • 5 V and 3.3 V Power Supplies are Supported MCM32N864 MCM32N865 MCM32P864 MCM32P865 112 –LEAD
12	MCM32N865	Motorola	256KB Secondary Cache Module able, Bank Output Enable • Decoupling Capacitors are Used for Each Fast Static RAM • High Quality Multi –Layer FR4 PWB With Separate Power and Ground Planes • 5 V and 3.3 V Power Supplies are Supported MCM32N864 MCM32N865 MCM32P864 MCM32P865 112 –LEAD
13	2N869	Motorola	PNP silicon annular transistors IB '" 0) 2N869 2N995 VCEO(sust) 18 15 ------ ------ Vdc Emitter-Base Breakdown Voltage (IE = 10 /l Adc, IC = 0) 2N869 2N995 BVEBO 5.0 4.0 ------ ------ Vdc Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 2N869 2N995 (VCB = 15 Vdc, IE = 0,
14	2N869A	Motorola	PNP SIlicon Small-Signal Transistor
15	MTM2N85	Motorola	Power MOSFET