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2N834 |
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| Part Number | 2N834 |
| Manufacturer | Motorola |
| Description | 834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Coll... |
| Features |
C TIME TEST SET OR EQUIVALENT.
2N834, 2N835 (continued)
ELECTRICAL CHARACTERISTICS (TA'i= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 10 j.l.Adc, ~ = 0)
Emitter-Base Breakdown Voltage
(~= 10 j.l.Adc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0)
Collector Cutoff Current
(VCB = 20 Vdc, ~ = 0) (VCB = 20 Vdc, ~ = 0, TA = IS0oC)
2N834 2N835
2N834 2N835
2N834 2N835
ON CHARACTERISTICS DC Current Gain 111
(Ie = 10 mAdc, VCE = 1 Vdc)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1 mAdc) (IC =... |
| Document |
 2N834 Data Sheet
PDF 112.12KB |
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