Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2N834 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N834 |
| Manufacturer | Motorola |
| Title | NPN silicon epitaxial transistors |
| Description | 834 2N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Total Device DisSipation @. |
| Features | C TIME TEST SET OR EQUIVALENT. 2N834, 2N835 (continued) ELECTRICAL CHARACTERISTICS (TA'i= 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 j.l.Adc, ~ = 0) Emitter-Base Breakdown Voltage (~= 10 j.l.Adc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0) Collector Cutoff Current (VCB = 20 Vdc, ~ = 0) (VCB = 20. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N835 |
Motorola |
NPN silicon epitaxial transistors |
|
| 2 | 2N838 |
Motorola |
PNP germanium epitaxial mesa transistor |
|
| 3 | 2N80 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2N80 |
Unisonic Technologies |
800V N-CHANNEL POWER MOSFET |
|
| 5 | 2N80-C |
UTC |
800V NHANNEL POWER MOSFET |
|
| 6 | 2N80Z |
Unisonic Technologies |
800V N-CHANNEL POWER MOSFET |
|
| 7 | 2N827 |
Motorola |
PNP germanium mesa transistor |
|
| 8 | 2N828 |
Motorola |
PNP germanium epitaxial mesa transistor |
|
| 9 | 2N828A |
Motorola |
PNP germanium epitaxial mesa transistors |
|
| 10 | 2N829 |
Motorola |
PNP germanium epitaxial mesa transistors |
|
Desde 2024. D4U Semiconductor.
|