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Motorola Inc |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
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Motorola Inc |
TMOS SWITCHING FET TRANSISTORS |
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Motorola Inc |
TRIACS Silicon Bidirectional Triode Thyristors MT1 MT2 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = –40 to +110°C) 1/2 Sine Wave 50 to 60 Hz, Gate Open Symbol VDRM 2N6342, 2N6346 2N6343, 2N6 |
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Motorola Inc |
TMOS SWITCHING FET TRANSISTORS rage Temperature Range I ITJJ Tstg –55to +150 I“c 1 (1) The Power Dissipation of the psckaga mav result in a lower continuous drain current. (2) Pulse Width ~ 300 x OutV Cvcles 2.0% MPF6659 ~~~MPF6660 MPF6661 CASE 29-03 TO-226AE ~OS ia a tradem |
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Motorola |
silicon controlled rectifiers ate Current~Forward IGM 2.0 Peak Gate Voltage-Forward Reverse Operating Junction Temperature Range Storage Temperature Range Stud Torque VGFM VGRM TJ Tstg - 10 5.0 -65 to +125 -65 to +150 30 tvRSM for all types can be appUed on a continuous dc |
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Motorola |
PNP Transistor t DC/mW DC/mW FIGURE 1 - POWER ·TEMPERATURE DERATING 220 "- 200 r--..... ......., 180 " 1..0s 160 " ~ 1411 "'" ."- >= ;1; 120 ili 100 " C "- ~~ 80 60 " ~ 40 "" 20 o '" 20 .......... ' \ . 'JC = 0.25DC/mW ........ "\.. 'JA = 0.375DC/mW"'- . |
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Motorola |
NPN SILICON POWER TRANSISTORS — High Temperature Performance Specified for: Reversed Biased SOA with Inductive Loads CASE 1 –07 TO –204AA Switching Times with Inductive Loads Saturation Voltages ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Currents ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |
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Motorola |
SILICON CONTROLLED RECTIFIERS |
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Motorola Inc |
Silicon Controlled Rectifiers |
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Motorola Inc |
4 AMPERE POWER TRANSISTOR |
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Motorola Inc |
TMOS SWITCHING FET TRANSISTORS |
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Motorola |
silicon controlled rectifiers ate Current~Forward IGM 2.0 Peak Gate Voltage-Forward Reverse Operating Junction Temperature Range Storage Temperature Range Stud Torque VGFM VGRM TJ Tstg - 10 5.0 -65 to +125 -65 to +150 30 tvRSM for all types can be appUed on a continuous dc |
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Motorola |
PNP Transistor mall Signal Current Gain Cutoff Frequency VCB = 6 V, ~ - 1. 0 mA fab 1.5 2.0 2.5 MHz Output Capacity Cob 10 10 10 pF VCB .. 6 V, ~ • 0 mA, I,. 1 MHz Noise Figure = VCE 4. 5 V, IE .. O. 5 mA, R,. =I, f =kHz .1f-lHz Collector Reverse Curr |
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Motorola Semiconductor |
Silicon Controlled Rectifiers ve Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) IT(RMS) IT(AV) ITSM I2t 16 10 160 145 Amps Amps Amps A2s Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current Operating Junctio |
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Motorola |
Darlington Transistors ) (IC = 10 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 m Adc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 m Adc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cuto |
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Motorola |
SILICON CONTROLLED RECTIFIERS |
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Motorola |
High Power NPN SIlicon Transistor |
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Motorola Inc |
4 AMPERE POWER TRANSISTOR |
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Motorola Inc |
Sensitive Gate Triacs TRIACs 4 AMPERES RMS 200 thru 600 VOLTS MT1 MT2 G MT2 G MT2 MT1 CASE 77-08 (TO-225AA) STYLE 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 110°C) 2N6071A,B 2N6073A,B 2N6 |
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Motorola Inc |
Silicon Controlled Rectifiers |
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Desde 2024. D4U Semiconductor.
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