Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N6660 |
| Part Number | 2N6660 |
| Manufacturer | Motorola Inc |
| Title | TMOS SWITCHING FET TRANSISTORS |
| Description | 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, high- speed power switching applications such as switching power sup- plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,interfa. |
| Features |
age Temperature Range
I ITJJ Tstg
–55to +150 I“c 1 (1) The Power Dissipation of the psckaga mav result in a lower continuous drain current. (2) Pulse Width ~ 300 x OutV Cvcles 2.0% MPF6659 ~~~MPF6660 MPF6661 CASE 29-03 TO-226AE ~OS ia a trademark of Motorola inc. @ MOTOROW INC.,19a3 DS482C ELECTRICALCHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristics Symbol OFF CHARACTE. |
2N6660 |
| Part Number | 2N6660 |
| Manufacturer | Vishay Siliconix |
| Title | N-Channel MOSFET |
| Description | DSCC PART NUMBER Commercial Commercial, Lead (Pb)-free VISHAY ORDERING PART NUMBER 2N6660 2N6660-E3 2N6660-2 2N6660JTX02 2N6660JTXL02 2N6660JTXP02 2N6660JTXV02 2N6660JTVP02 www.vishay.com/doc?67884 See -2 Flow Document JANTX2N6660 (std Au leads) JANTX2N6660 (with solder) JANTX2N6660P (with PIND) JA. |
| Features |
• Military Qualified • • • • • • • • • • • 3 D TO-205AD (TO-39) Low On-Resistence: 1.3 Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage BENEFITS S 1 2 G APPLICATIONS • Hi-Rel Systems • Direct Logic-Level . |
2N6660 |
| Part Number | 2N6660 |
| Manufacturer | Microchip |
| Title | N-Channel Enhancement-Mode Vertical DMOS FET |
| Description | 2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature c. |
| Features |
• Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain Applications • Motor controls • Converters • Amplifiers • Switches • Power supply circuits • Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.. |
2N6660 |
| Part Number | 2N6660 |
| Manufacturer | Seme LAB |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 2. |
| Features | /W 172 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current . |
2N6660 |
| Part Number | 2N6660 |
| Manufacturer | TT |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | N-Channel Enhancement Mode Power MOSFET 2N6660 Hermetic Metal TO39 (TO-205AD) Package VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω Fast Switching, Low CISS Integral Source-Drain Body Diode High Reliability and Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS . |
| Features | imits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, L. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6660-2 |
Vishay Siliconix |
N-Channel MOSFET |
|
| 2 | 2N6660JAN |
Vishay |
N-Channel MOSFET |
|
| 3 | 2N6660JANTX |
Vishay Siliconix |
N-Channel MOSFET |
|
| 4 | 2N6660JANTXV |
Vishay Siliconix |
N-Channel MOSFET |
|
| 5 | 2N6660X |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
|
| 6 | 2N6661 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 7 | 2N6661 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs |
|
| 8 | 2N6661 |
Motorola Inc |
TMOS SWITCHING FET TRANSISTORS |
|
| 9 | 2N6661 |
Vishay Siliconix |
N-Channel MOSFET |
|
| 10 | 2N6661 |
TT |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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