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Motorola |
Amplifier Transistors = 0 ) 2N5550 2N5551 Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5550 2N5551 2N5550 2N55 |
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Motorola |
AMPLIFIER TRANSISTORS |
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Motorola |
PNP Transistor Vdc, ~ = 0) 2N502.A, B 2N502A, BJAN 2N1742 2N499,A, 2N499,A JAN DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (lC = 2.0 mAde, VCE = 10 Vde, f = 20 MHz) 2N499, A, 2N499, A JAN (IC = 2.0 mAde, VCE = 10 Vde, f = 100 MHz) JAN2N502A, B Output |
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Motorola |
SWITCHING JFET |
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Motorola Inc |
P-CHANNEL JFET Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) — — 0.75 1.0 1.8 0.5 0.8 1.5 — — — — — — — — 5.0 1.0 6.0 7.5 9.0 4.0 4.5 6.0 nAdc µAdc Vdc 40 — |
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Motorola |
Amplifier Transistors = 0 ) 2N5550 2N5551 Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5550 2N5551 2N5550 2N55 |
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Motorola |
PNP germanium power transistors limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector-emitter short. ,2 . .. , •0 20 3D COLUCTONMlml VOLTAGE (VOLTS |
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Motorola |
SWITCHING JFET |
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Motorola |
(2N5060 - 2N5064) Silicon Controlled Rectifiers |
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Motorola |
Triacs |
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Motorola Inc |
SILICON CONTROLLED RECTIFIERS |
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Motorola |
AMPLIFIER TRANSISTOR e = 0) Collector Cutoff Current (Vcb = 10 Vdc, Ie = 0) (Vcb = 35 Vdc, Ie = 0) Emitter Cutoff Current (Vbe = 3.0 Vdc, Cl = 0) ON CHARACTERISTICS DC Current Gain dC = 100 /xAdc, Vce = 5.0 Vdc) 2N5086 2N5087 Symbol Nlin v (BR)CEO 50 V(BR)CBO 5 |
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Motorola |
PNP Transistor N324 2N508 fa-b 1.0 1.5 2.0 2.5 2-17 Max 16 16 - 65 121 198 198 320 35 -- Unit /LAde /LAde Vdc - mVdc pF MHz |
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Motorola |
PNP germanium power transistors limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector-emitter short. ,2 . .. , •0 20 3D COLUCTONMlml VOLTAGE (VOLTS |
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Motorola |
VHF/UHF AMPLIFIER JFET |
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Motorola |
JFET VHF/UHF AMPLIFIER |
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Motorola |
HIGH-FREQUENCY AMPLIFIER JFET |
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Motorola Inc |
P-CHANNEL JFET Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) — — 0.75 1.0 1.8 0.5 0.8 1.5 — — — — — — — — 5.0 1.0 6.0 7.5 9.0 4.0 4.5 6.0 nAdc µAdc Vdc 40 — |
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Motorola Inc |
BIDIRECTIONAL TRIODE THYRISTORS |
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Motorola Inc |
BIDIRECTIONAL TRIODE THYRISTORS |
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Desde 2024. D4U Semiconductor.
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