Motorola 16N Hoja de datos

No.	parte #	Fabricante	Descripción
1	MTV16N50E	Motorola	TMOS POWER FET 16 AMPERES 500 VOLTS le to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MTV16N50E TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM ® D N –Channel G CASE 433 –01, Style 2 D
2	MCR16N	Motorola	Silicon Controlled Rectifiers
3	MC68HC705B16N	Motorola	HCMOS Microcomputer
4	MAC16N	Motorola	Triac Current (60 Hz, TC = 80°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junctio
5	MTB16N25E	Motorola	TMOS POWER FET alanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — N
6	MTP16N25E	Motorola	TMOS POWER FET 0.25 OHM ® D G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain Current — Conti
7	MTY16N80E	Motorola	TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM ES 800 VOLTS RDS(on) = 0.50 OHM ® G S CASE 340G –02, STYLE 1 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10
8	MTW16N40E	Motorola	TMOS POWER FET
9	16N25E	Motorola	MTB16N25E e Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for M