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16N25E |
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| Part Number | 16N25E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK ... |
| Features |
e Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation • Available in 24 mm 13 –inch/800 Unit Tape & Reel, Add –T4 Suffix to Part Number G S ™ Data Sheet MTB16N25E Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM ® D CASE 418B –02, Style 2 D2PAK MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltag... |
| Document |
 16N25E Data Sheet
PDF 198.77KB |
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Desde 2024. D4U Semiconductor.
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