No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Mos-Tech Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor • –3.3 A, –20 V. RDS(ON) = 0.072 Ω @ VGS = –4.5 V RDS(ON) = 0.096Ω @ VGS = –2.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling ca |
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