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Mitsubishi |
Transistor Module |
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Mitsubishi Electric Semiconductor |
TRANSISTOR MODULE verse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE nction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 6 |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE age Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, |
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Mitsubishi |
TRANSISTOR MODULES |
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Mitsubishi |
Transistor |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE e voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE lector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE ward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (ha |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE on Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode cur |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE on Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode cur |
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Mitsubishi Electric Semiconductor |
Transistor Module voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mou |
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Mitsubishi Electric Semiconductor |
Transistor Module voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Moun |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE e voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE e voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE NON-INSULATED TYPE rwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 300 300 1250 10 3000 –40~+150 –40~+125 Charged part to case, AC for 1 |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE torage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 30 30 250 1 |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 |
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Mitsubishi Electric Semiconductor |
DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE ght (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC TC=25°C DC Ratings 1200 1200 1200 7 30 310 6 –40~+150 –40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 |
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Desde 2024. D4U Semiconductor.
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