QM300DY-2HB Mitsubishi Electric Semiconductor HIGH POWER SWITCHING USE INSULATED TYPE Datasheet. existencias, precio

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QM300DY-2HB

Mitsubishi Electric Semiconductor
QM300DY-2HB
QM300DY-2HB QM300DY-2HB
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Part Number QM300DY-2HB
Manufacturer Mitsubishi Electric Semiconductor
Description MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector current 300A VCEX Collector-emitter voltage ... ...
Features e voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 300 300 1980 16 3000
  –40~+150
  –40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.83~10.8 90~110 1.96~2.94 20~30 1.96~2.94 20~30 1100 Unit V V V V A A W A A °C °C V N...

Document Datasheet QM300DY-2HB Data Sheet
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