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Mitsubishi Electric Semiconductor |
MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear o |
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Mitsubishi Electric |
RoHS Compliance • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 440-520MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V www.DataSheet4U.com • Module Size: 66 x 21 |
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Mitsubishi Electric Semiconductor |
MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear o |
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Mitsubishi Electric Semiconductor |
MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear o |
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Mitsubishi Electric |
3 Stage Amp • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-450MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Reverse |
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Mitsubishi Electric |
RoHS Compliance • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG=0V) www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) • P |
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Mitsubishi Electric |
RoHS Compliance • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG1=VGG2=0V) www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case |
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Desde 2024. D4U Semiconductor.
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