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RA45H7687M1 |
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| Part Number | RA45H7687M1 |
| Manufacturer | Mitsubishi Electric |
| Description | The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mod... |
| Features |
• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG=0V) www.DataSheet4U.com 1 4 5 1 2 3 4 5 RF Input added Gate Voltage 1(Pin&VGG1) Gate Voltage 2(VGG2), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) • Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW • Broadband Frequency Range: 764-870MHz • Metal cap structure that makes the improvements of RF radiation simple • Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V • Module Size: 67 x 18 x 9.9 mm • Linear operation is possible by setting the quiescent drain current with th... |
| Document |
 RA45H7687M1 Data Sheet
PDF 194.53KB |
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Desde 2024. D4U Semiconductor.
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