| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Mitsubishi Electric |
BCR16A M PG (AV) VGM IGM Tj Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Conditions Commercial frequency, sine full |
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Mitsubishi Electric Semiconductor |
Triac ve peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Cond |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE PGM PG (AV) VFGM VRGM IFGM Tj Tstg — — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forw |
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Mitsubishi Electric Semiconductor |
THYRISTOR ge on-state current I2t for fusing PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperatur |
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Mitsubishi Electric Semiconductor |
TRIAC tive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gat |
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Mitsubishi Electric Semiconductor |
TRIAC g Conditions Commercial frequency, sine full wave 360° conduction, Tc=93 °C V 3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 10 100 41.6 5 0.5 10 2 –40 ~ +12 |
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Mitsubishi Electric Semiconductor |
TRIAC epetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Pea |
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Mitsubishi Electric Semiconductor |
Triac achine, electric tool MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 14 700 840 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter |
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Mitsubishi Electric Semiconductor |
TRIAC meter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fus |
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Mitsubishi Electric Semiconductor |
THYRISTOR M PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Tc =91°C 60Hz sine half wave 1 full cycle, peak value |
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Mitsubishi Electric Semiconductor |
TRIAC tion Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =103°C 60Hz sinewave 1 full cycle, peak value, |
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Mitsubishi Electric Semiconductor |
TRIAC tion Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =98°C 60Hz sinewave 1 full cycle, peak value, n |
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Mitsubishi Electric Semiconductor |
TRIAC machine, electric tool MAXIMUM RATINGS Symbol V DRM V DSM Parameter Repetitive peak off-state voltageV 1 Voltage class 14 700 840 Unit V V Non-repetitive peak off-state voltageV1 Symbol I T (RMS) I TSM I 2t PGM PG (AV) VGM I GM Tj T stg — Viso Pa |
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Mitsubishi Electric Semiconductor |
TRIAC l MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-sta |
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Mitsubishi Electric Semiconductor |
Triac g Conditions Commercial frequency, sine full wave 360° conduction, Tc=84 °C V 3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 12 120 60 5 0.5 10 2 –40 ~ +125 |
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Mitsubishi Electric Semiconductor |
Triac Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Conditions Commercial frequency, sine full wave, 360° conductio |
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Mitsubishi Electric Semiconductor |
TRIAC tion Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =100°C 60Hz sinewave 1 full cycle, peak value, |
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Mitsubishi Electric Semiconductor |
Triac eak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Non-repetitive peak off-state voltage V1 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Peak g |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER/ INVERTER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE 8 400 500 400 500 12 600 720 600 720 26 MAX φ8.7 MAX 3 MIN 2 Unit V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg — — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusi |
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Mitsubishi Electric Semiconductor |
TRIAC , other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) V |
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Desde 2024. D4U Semiconductor.
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