BCR12CM |
Part Number | BCR12CM |
Manufacturer | Mitsubishi Electric Semiconductor |
Description | MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dimensions in mm 4.5 4 1.3 16 MAX ∗ 12.5 MIN 3.8... |
Features |
epetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg —
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Tc =98°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state c... |
Document |
BCR12CM Data Sheet
PDF 91.86KB |
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