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Mitsubishi Electric |
IGBT Module ector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 1540 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT MODULES ight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 1900 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 600 Unit V V A A W °C °C V N •m N •m N •m g (Note 2) (Note 2) Main terminal |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies E C E G |
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Mitsubishi Electric |
IGBT Module current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditi |
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Mitsubishi Electric Semiconductor |
IGBT Module |
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Mitsubishi Electric Semiconductor |
IGBT Module TC = 78°C*1 Pulse Pulse TC = 25°C*1 (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typica |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT MODULES ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diodes ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ UPS ٗ Forklift E E C G Outline Drawing and Circuit Diagram Dimensions A B C D |
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Mitsubishi Electric Semiconductor |
IGBT Module |
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Mitsubishi Electric Semiconductor |
IGBT Module |
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Mitsubishi Electric Semiconductor |
IGBT Module |
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Mitsubishi Electric Semiconductor |
IGBT Module dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ = 111°C*3 Pulse Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 2080 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4 |
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Mitsubishi Electric |
IGBT MODULES j = 125°C 800 600 400 200 0 6 5.75 5.5 5.25 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATU |
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Mitsubishi Electric |
IGBT Module Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation volta |
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Desde 2024. D4U Semiconductor.
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