CM600HU-24F Mitsubishi Electric Semiconductor IGBT MODULES Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

CM600HU-24F

Mitsubishi Electric Semiconductor
CM600HU-24F
CM600HU-24F CM600HU-24F
zoom Click to view a larger image
Part Number CM600HU-24F
Manufacturer Mitsubishi Electric Semiconductor
Description MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE CM600HU-24F ¡IC . 600A ¡VCES ........
Features ight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 1900
  –40 ~ +150
  –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 600 Unit V V A A W °C °C V N
•m N
•m N
•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VG...

Document Datasheet CM600HU-24F Data Sheet
PDF 105.41KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 CM600HU-24F
Powerex Power Semiconductors
IGBT Module Datasheet
2 CM600HU-24H
Mitsubishi Electric Semiconductor
IGBT Module Datasheet
3 CM600HU-24H
Powerex Power Semiconductors
IGBT Module Datasheet
4 CM600HU-12F
Mitsubishi Electric Semiconductor
IGBT Module Datasheet
5 CM600HU-12F
Powerex Power Semiconductors
IGBT Module Datasheet
6 CM600HU-12H
Mitsubishi Electric Semiconductor
IGBT Module Datasheet
More datasheet from Mitsubishi Electric Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad