Microsemi Corporation 2N6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N6287	Microsemi Corporation	PNP DARLINGTON POWER SILICON TRANSISTOR a 180 degree lead orientation. Qualified Levels: JAN, JANTX, and JANTXV Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6286 and 2N6287 • JAN, JANTX, and JANTXV qualifications are ava
2	2N6351	Microsemi Corporation	NPN DARLINGTON POWER SILICON TRANSISTOR 6352, 2N6353 TO-24* (TO-213AA) *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 25 mAdc, RB1E = 2.2
3	2N6353	Microsemi Corporation	NPN DARLINGTON POWER SILICON TRANSISTOR • JEDEC registered 2N6352 and 2N6353 • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/472 (See part nomenclature for all available options) • RoHS compliant versions available (commercial grade only) APPLICATIONS / BENEFITS • M
4	2N6678	Microsemi Corporation	(2N66xx) NPN POWER SILICON TRANSISTOR haracteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = 1.5 Vdc VCE = 650 Vdc, VBE = 1.5 Vdc 2N6676, 2N6691 2N6678, 2N6693 2N6676, 2N6691 2N6678
5	2N6303	Microsemi Corporation	Silicon PNP Power Transistors • • • • Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, sat
6	2N6352	Microsemi Corporation	NPN DARLINGTON POWER SILICON TRANSISTOR • JEDEC registered 2N6352 and 2N6353 • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/472 (See part nomenclature for all available options) • RoHS compliant versions available (commercial grade only) APPLICATIONS / BENEFITS • M
7	2N6547	Microsemi Corporation	NPN POWER SILICON TRANSISTOR se Cutoff Current VEB = 8 Vdc 2N6546 2N6547 2N6546 2N6547 V(BR)CEO 300 400 1.0 1.0 1.0 Vdc ICEX IEBO mAdc mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6546, 2N6547 JAN SERIES
8	2N6546	Microsemi Corporation	NPN POWER SILICON TRANSISTOR se Cutoff Current VEB = 8 Vdc 2N6546 2N6547 2N6546 2N6547 V(BR)CEO 300 400 1.0 1.0 1.0 Vdc ICEX IEBO mAdc mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6546, 2N6547 JAN SERIES
9	2N6306	Microsemi Corporation	NPN POWER SILICON TRANSISTOR V(BR)CEO 250 350 5.0 5.0 50 50 5.0 Vdc ICEX µAdc ICEO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6306, 2N6308 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Chara
10	2N6350	Microsemi Corporation	NPN DARLINGTON POWER SILICON TRANSISTOR 6352, 2N6353 TO-24* (TO-213AA) *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 25 mAdc, RB1E = 2.2
11	2N6383	Microsemi Corporation	NPN DARLINGTON POWER SILICON TRANSISTOR 2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-
12	2N6384	Microsemi Corporation	NPN DARLINGTON POWER SILICON TRANSISTOR 2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-
13	2N6081	Microsemi Corporation	RF & MICROWAVE TRANSISTORS
14	2N6051	Microsemi Corporation	PNP DARLINGTON POWER SILICON TRANSISTOR rent VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N6051 2N6052 2N6051 2N6052 2N6051 2N6052 V(BR)CEO 80 100 1.0 1.0 0.5 0.5 2.0 Vdc ICEO mAdc ICEX mAdc IEBO mAdc 6 Lake Street, Lawrence, MA
15	2N6341	Microsemi Corporation	NPN POWER SILICON TRANSISTOR off Current VCE = 100 Vdc, VBE = 1.5 Vdc VCE = 150 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB = 180 Vdc 2N6338 2N6341 2N6338 2N6341 2N6338 2N6341 V(BR)CEO 100 150 50 Vdc ICEO µAdc I
16	2N6648	Microsemi Corporation	PNP DARLINGTON POWER SILICON TRANSISTOR 6648 2N6649 2N6650 2N6648 2N6649 2N6650 V(BR)CEO -40 -60 -80 -40 -60 -80 -1.0 -1.0 -1.0 Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCB = -40 Vdc VCB = -60 Vdc VCB = -80 Vdc ICBO
17	2N6255	Microsemi Corporation	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.5 volt VHF equipment. Application
18	2N6286	Microsemi Corporation	PNP DARLINGTON POWER SILICON TRANSISTOR a 180 degree lead orientation. Qualified Levels: JAN, JANTX, and JANTXV Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6286 and 2N6287 • JAN, JANTX, and JANTXV qualifications are ava
19	2N6304	Microsemi Corporation	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Ca
20	2N6385	Microsemi Corporation	NPN DARLINGTON POWER SILICON TRANSISTOR 2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-