| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Microsemi Corporation |
N-Channel FREDFET • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC |
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Microsemi Corporation |
N-Channel MOSFET • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asym |
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Microsemi |
High Speed NPT IGBT Typical Applications APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) • Fast Switching with low EMI • Very Low EOFF for Maximum Efficiency • Short circuit rated • Low Gate Charge • ZVS Phase Shifted and other Full Bridge • Half Bridge • High Power PFC Boost • |
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Microsemi Corporation |
N-Channel MOSFET • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asym |
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Microsemi Corporation |
Full - Bridge NPT IGBT Power Module • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • |
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Microsemi |
MOSFET Power Module • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature |
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Microsemi Corporation |
Power-Module IGBT • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitte |
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Microsemi |
IGBT • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for |
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Microsemi |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE • Ultrafast Recovery Times PRODUCT BENEFITS • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-220 Package or • Cooler Operation Surface Mount D2 PAK Package • Low Forward Voltage • Higher Reliability Systems • Lo |
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Microsemi |
High-Voltage Schottky Diode The following are key features of the APT100S20BG device: Low forward voltage Low leakage current Ultrafast reverse recovery Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the APT100S20BG device: High switching |
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Microsemi |
MOSFET Power Module |
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Microsemi |
MOSFET Power Module • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated Q2 G2 S2 0 /V BU S NT C1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switc |
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Microsemi |
N-Channel MOSFET • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC |
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Microsemi |
Super Junction MOSFET / Test Conditions MIN TYP MAX BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 600 RDS(on) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 44.4A) .037 .041 IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 25°C |
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Microsemi Corporation |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE • Ultrafast Recovery Times • Soft Recovery Characteristics • Popular TO-220 Package • Low Forward Voltage • Low Leakage Current • Avalanche Energy Rated PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation • Higher Reliability Syst |
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Microsemi Corporation |
N-Channel FREDFET • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC |
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Microsemi Corporation |
Phase leg Trench Field Stop IGBT Power Module • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for |
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Microsemi |
Schottky Diode • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration • • • + ~ ISOT |
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Microsemi Corporation |
Thunderbolt IGBT • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # |
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Microsemi Corporation |
Thunderbolt IGBT • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant G E • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current G C E G C E C Maximum Ratings Sym |
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Desde 2024. D4U Semiconductor.
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