APT77N60BC6 |
Part Number | APT77N60BC6 |
Manufacturer | Microsemi (https://www.microsemi.com/) |
Description | APT77N60BC6 APT77N60SC6 600V 77A 0.041Ω COOLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extrem... |
Features |
/ Test Conditions
MIN TYP MAX
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
600
RDS(on) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 44.4A)
.037 .041
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 25°C) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 150°C)
25 250
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA)
2.5 3 3.6
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT Volts Ohms
μA
nA Volts... |
Document |
APT77N60BC6 Data Sheet
PDF 190.43KB |
Distributor | Stock | Price | Buy |
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