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| Distributor | Stock | Price | Buy |
|---|
APT77N60BC6 |
| Part Number | APT77N60BC6 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 77 A IDM Drain Current-Single Pluse . |
| Features |
·Drain Current –ID=77A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.041Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VD. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | APT77N60JC3 |
Advanced Power Technology |
Super Junction MOSFET |
|
| 2 | APT77N60SC6 |
Microsemi |
Super Junction MOSFET |
|
| 3 | APT70GR120B2 |
Microsemi |
IGBT |
|
| 4 | APT70GR120J |
Microsemi |
IGBT |
|
| 5 | APT70GR120L |
Microsemi |
IGBT |
|
| 6 | APT751R2AN |
Advanced Power Technology |
Power MOSFET |
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| 7 | APT751R2BN |
Advanced Power Technology |
Power MOSFET |
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| 8 | APT751R2CN |
Advanced Power Technology |
Power MOSFET |
|
| 9 | APT751R4AN |
Advanced Power Technology |
Power MOSFET |
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| 10 | APT751R4BN |
Advanced Power Technology |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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