| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolu |
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Silan Microelectronics |
N-channel enhancement mode field effect transistor |
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Silan Microelectronics |
800V N-CHANNEL MOSFET ∗ 3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF3N80M SVF3N80F SVF3N80D SVF3N80DTR Package Type TO-251-3L TO-220F-3L TO-252-2L TO-252-2L |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 800 V RDS(on) max. 3.5 Ω ID 2.5 A PTOT 60 W 20 W 60 W Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-pr |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package Marking Code Delivery Mode RoHS Status SDP03N80HZ |
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Silan Microelectronics |
N-channel enhancement mode field effect transistor |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STB23N80K5 800 V 0.28 Ω 16 A • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected PTOT 190 W Applications • Switching ap |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolu |
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ST Microelectronics |
18 A PowerFLAT 8x8 HV Zener-protected SuperMESH 5 Power MOSFET Type STL23N85K5 VDSS 850 V RDS(on)max < 0.275 Ω ID 18(1) PW 210 ' $ 3 3 3 1. The value is rated according to Rthj-c. ■ ■ ■ ■ ■ PowerFLAT™ 8x8 HV worldwide best RDS(on) Worldwide best FOM (figure of merit) Ultra low gate charge 100% a |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package Marking Code Delivery Mode RoHS Status SDP03N80HZ |
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Silan Microelectronics |
800V N-CHANNEL MOSFET 3A,800V,RDS(on)(typ.)=3.8@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE 2 1 1.Gate 1 23 TO-251J-3L 3 2.Drain 3.Source TO-252-2L 1 23 TO-251D-3L TO-251N-3L 123 TO-220-3L TO-220F-3L ORDERING |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 800 V RDS(on) max. 3.5 Ω ID 2.5 A PTOT 60 W 20 W 60 W Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-pr |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolu |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolu |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.8Ω ) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（T |
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Micro Electronics |
(3N8x) Silicon Controlled Switches |
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STMicroelectronics |
N-channel Power MOSFET 3 2 1 TO-220FP D(2) Order code VDS STF3N80K5 800 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on) max. 3.5 Ω ID 2.5 A Applications G(1 |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 800 V RDS(on) max. 3.5 Ω ID 2.5 A PTOT 60 W 20 W 60 W Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-pr |
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STMicroelectronics |
N-channel Power MOSFET 1 23 I2PAKFP Figure 1. Internal schematic diagram D(2) Order code VDS STFI13N80K5 800 V RDS(on) 0.45 Ω ID 12 A PTOT 35 W • Fully insulated and low profile package with increased creepage path from pin to heatsink plate • Industry’s lowest RDS(o |
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Silan Microelectronics |
800V N-CHANNEL MOSFET ∗ 3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF3N80M SVF3N80F SVF3N80D SVF3N80DTR Package Type TO-251-3L TO-220F-3L TO-252-2L TO-252-2L |
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Desde 2024. D4U Semiconductor.
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