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23N80K5 |
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| Part Number | 23N80K5 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultr... |
| Features |
Order code
VDS
RDS(on) max.
ID
STB23N80K5
800 V
0.28 Ω
16 A
• Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected PTOT 190 W Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STB23N80K5 Prod... |
| Document |
 23N80K5 Data Sheet
PDF 462.57KB |
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Desde 2024. D4U Semiconductor.
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