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23N50E N-CHANNEL POWER MOSFET Datasheet


23N50E

UTC
23N50E
Part Number 23N50E
Manufacturer UTC
Title MOSFET DIS.23A 500V N-CH TO3P SUPER FAP-E THT
Description The 23N50E uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitabl...
Features * RDS(ON) < 245mΩ@VGS = 10V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability „ SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 23N50EL-T47-T 23N50EG-T47-T 23N50EL-T3P-T 23N50EG-T3P-T 23N50EL-T3N...

Document Datasheet 23N50E datasheet pdf (160.74KB)
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30 units: 3.2917 USD
1 units: 3.62087 USD
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23N50E

Fuji Electric
23N50E
Part Number 23N50E
Manufacturer Fuji Electric
Title N-CHANNEL SILICON POWER MOSFET
Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non.
Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF.

Document 23N50E datasheet pdf



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