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Matsuki |
1.0A Adjustabe and Fixed Voltage LDO Linear Regulator The ME6100 is a low-dropout linear regulator that operates 1. Low dropout voltage 700mV at 1.0A typ. the input voltage from +2.5V to +7.0V and delivers 1.0A load 2. Adjustable output voltage or fixed output voltage current. (ME6100-xx) present a |
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Matsuki |
30V N-Channel Enhancement Mode MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maxim |
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Matsuki |
N-Channel MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application. PIN CONFIGURATION (TO-252) Top View APPLICATIONS ● Motherboard (V-Core) ● Portable Equipment ● DC/ |
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Matsuki |
25V N-Channel Enhancement Mode MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maxim |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦17mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inver |
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Matsuki |
25V N-Channel Enhancement Mode MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maxim |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦17mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch (TO-220) Top View |
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Matsuki |
30V N-Channel Enhancement Mode MOSFET ● RDS(ON)≦8.5mΩ@VGS=10V ● RDS(ON)≦13mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inve |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦16.5mΩ@VGS=-10V ● RDS(ON)≦20.5mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦17mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch (TO-220) Top View |
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Matsuki |
N-Channel MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application. PIN CONFIGURATION (TO-252) Top View APPLICATIONS ● Motherboard (V-Core) ● Portable Equipment ● DC/ |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦22mΩ@VGS=4.5V ● RDS(ON)≦23mΩ@VGS=4.0V ● RDS(ON)≦26mΩ@VGS=3.0V ● RDS(ON)≦29mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management i |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦19mΩ@VGS=4.5V ● RDS(ON)≦24mΩ@VGS=2.5V ● RDS(ON)≦39mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable E |
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Matsuki |
Dual P-Channel MOSFET ● RDS(ON)≦31mΩ@VGS=-4.5V ● RDS(ON)≦43mΩ@VGS=-2.5V ● RDS(ON)≦63mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portabl |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦16.5mΩ@VGS=-10V ● RDS(ON)≦20.5mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦21mΩ@VGS=10V ● RDS(ON)≦24mΩ@ VGS=4.5V ● RDS(ON)≦32mΩ@ VGS=2.5V ● RDS(ON)≦50mΩ@ VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦22mΩ@VGS=4.5V ● RDS(ON)≦23mΩ@VGS=4.0V ● RDS(ON)≦26mΩ@VGS=3.0V ● RDS(ON)≦29mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management i |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦26mΩ@VGS=4.5V ● RDS(ON)≦36mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Power |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦19mΩ@VGS=4.5V ● RDS(ON)≦24mΩ@VGS=2.5V ● RDS(ON)≦39mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable E |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦13.5mΩ@VGS=4.5V ● RDS(ON)≦18mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Pow |
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Desde 2024. D4U Semiconductor.
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