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ME60P06T-G |
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| Part Number | ME60P06T-G |
| Manufacturer | Matsuki |
| Description | The ME60P06T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
| Features |
● RDS(ON)≦16.5mΩ@VGS=-10V ● RDS(ON)≦20.5mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter Ordering Information: ME60P06T (Pb-free) ME60P06T-G (Green product-Halogen free ) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation* TC=25℃ TC=70℃ Operating Junction Tempera... |
| Document |
 ME60P06T-G Data Sheet
PDF 819.85KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME60P06T |
Matsuki |
P-Channel MOSFET |
|
| 2 | ME600815 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/800 Volts) |
|
| 3 | ME601215 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) |
|
| 4 | ME601615 |
Powerex Powers |
Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) |
|
| 5 | ME60N03 |
Matsuki |
30V N-Channel Enhancement Mode MOSFET |
|
| 6 | ME60N03-G |
Matsuki |
30V N-Channel Enhancement Mode MOSFET |
|
Desde 2024. D4U Semiconductor.
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