| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
4GB e-MMC Module THGBM5G5A1JBAIR Interface THGBM5G5A1JBAIR has the JEDEC/MMCA Version 4.41 interface with either 1-I/O, 4-I/O and 8-I/O mode support. Furthermore following several new functions that defined in JEDEC/MMCA Version 4.5 were supported. - 200MHz SDR / San |
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Toshiba |
4GB e-MMC Module THGBM4G5D1HBAIR Interface THGBM4G5D1HBAIR has the JEDEC/MMCA Version 4.41 interface with either 1-I/O, 4-I/O and 8-I/O mode support. Ball / Signal Allocation P-VFBGA153-1113-0.50-002 (11.5 x 13mm, H1.0mm max. package) 14 NC NC NC NC NC NC NC NC NC N |
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SMART Modular |
4GB (512Mx72) DDR3 SDRAM Module • Standard = JEDEC • ZQ calibration supported • Configuration = ECC • On chip DLL align DQ, DQS and DQS transition • Number of Module Ranks = 1 with CK transition • Number of Devices = 9 • DM write data-in at both the rising and falling • VD |
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MOD |
GLASS PASSIVATED BRIDGE RECTIFIERS Surge overload rating -135 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classification 94V-0 Mounting postition:Any .074(1.9) .059(1.5) .303(7.7) |
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SMART Modular |
4GB (512Mx64) DDR3 SDRAM Module • Standard = JEDEC • ZQ calibration supported • Configuration = Non-ECC • On chip DLL align DQ, DQS and DQS transition • Number of Module Ranks = 2 with CK transition • Number of Devices = 16 • DM write data-in at both the rising and falling |
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SMART Modular |
4GB (512Mx64) DDR3 SDRAM Module • Standard = JEDEC • ZQ calibration supported • Configuration = Non-ECC • On chip DLL align DQ, DQS and DQS transition • Number of Module Ranks = 1 with CK transition • Number of Devices = 8 • DM write data-in at both the rising and falling |
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TIANMA |
LCD_Module |
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TIANMA |
LCD_Module - : 6;*' " +'6;+'6<##= ! . +,;+,<##= '> . *, 3 . . ? # |
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eupec GmbH |
IGBT-Modules erlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter / diode inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - |
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MOD |
GLASS PASSIVATED BRIDGE RECTIFIERS Surge overload rating -135 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classification 94V-0 Mounting postition:Any .074(1.9) .059(1.5) .303(7.7) |
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MOD |
GLASS PASSIVATED BRIDGE RECTIFIERS Surge overload rating -135 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classification 94V-0 Mounting postition:Any .074(1.9) .059(1.5) .303(7.7) |
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MOD |
GLASS PASSIVATED BRIDGE RECTIFIERS Surge overload rating -135 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classification 94V-0 Mounting postition:Any .074(1.9) .059(1.5) .303(7.7) |
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MOD |
GLASS PASSIVATED BRIDGE RECTIFIERS Surge overload rating -135 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classification 94V-0 Mounting postition:Any .074(1.9) .059(1.5) .303(7.7) |
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MOD |
GLASS PASSIVATED BRIDGE RECTIFIERS Surge overload rating -135 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classification 94V-0 Mounting postition:Any .074(1.9) .059(1.5) .303(7.7) |
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MOD |
GLASS PASSIVATED BRIDGE RECTIFIERS Surge overload rating -135 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L lammability classification 94V-0 Mounting postition:Any .074(1.9) .059(1.5) .303(7.7) |
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TIANMA |
LCD_Module |
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TIANMA |
LCD_Module |
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TIANMA |
LCD_Module - : 6;*' " +'6;+'6<##= ! . +,;+,<##= '> . *, 3 . . ? # |
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SMART Modular Technologies |
4GByte (512Mx72) DDR3 SDRAM Module • • • • • • • • • • • • • • • • • • • Standard = JEDEC Configuration = ECC Number of Module Ranks = 2 Number of Devices = 36 VDD = VDDQ = 1.5V VDDSPD = 1.7V to 3.6V Cycle Time = 1.5ns CAS Latency = 5, 6, 7, 8, 9 Additive Latency = 0, CL-1, and CL-2 C |
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SMART Modular Technologies |
4GByte (512Mx72) DDR3 SDRAM Module • • • • • • • • • • • • • • • • • • • Standard = JEDEC Configuration = ECC Number of Module Ranks = 2 Number of Devices = 36 VDD = VDDQ = 1.5V VDDSPD = 1.7V to 3.6V Cycle Time = 1.5ns CAS Latency = 5, 6, 7, 8, 9 Additive Latency = 0, CL-1, and CL-2 C |
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Desde 2024. D4U Semiconductor.
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