SH5126SV351816-SE |
Part Number | SH5126SV351816-SE |
Manufacturer | SMART Modular |
Description | 512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, Non-ECC, 512Mx8 Based, PC3L-12800, DDR3L-160011-11-11, 30.00mm, 1.35V/1.5V, Halogen-Free (RoHS Compliant). Device Vendor Samsung, Rev. E K4B4G0846E-BY... |
Features |
• Standard = JEDEC • ZQ calibration supported • Configuration = Non-ECC • On chip DLL align DQ, DQS and DQS transition • Number of Module Ranks = 1 with CK transition • Number of Devices = 8 • DM write data-in at both the rising and falling • VDD = VDDQ = 1.35V/1.5V • VDDSPD = 3.0V to 3.6V • Cycle Time = 1.25ns • CAS Latency = 5, 6, 7, 8, 9, 10, 11 • Additive Latency = 0, CL-1, and CL-2 • CAS Write Latency (CWL) = 5, 6, 7, 8 • Burst Length = BC4, BL8, BC4 or BL8 (on the fly) • Burst Type = Nibble Sequential & Interleave Mode edges of the data strobe • All addresses and control inputs... |
Document |
SH5126SV351816-SE Data Sheet
PDF 449.96KB |
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