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STMicroelectronics |
STB30NF10 Type STB30NF10 STP30NF10 STP30NF10FP VDSS 100V 100V 100V RDS(on) <0.045Ω <0.045Ω <0.045Ω ID 35A 35A 35A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This Power MOSFET is the latest d |
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ON Semiconductor |
IGBT a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching |
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Microchip |
MCP2551 to MCP2561 Migration pin 9, Exposed Thermal Pad, and has the same pinout as the PDIP and SOIC packages. For further information on these differences and on the new models available, plea |
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ON Semiconductor |
IGBT a robust and cost effective ultra Field Stop (FS) Trench construction and provides superior performance. It is especially designed for low on−state and is well suited for resonant or soft switching topologies, such as those used in inductive heating |
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Toshiba Semiconductor |
PLL EREQUENCY SYNTHESIZER |
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STMicroelectronics |
STB30NF20 Type STP30NF20 STW30NF20 STB30NF20 ■ ■ ■ ■ ■ VDSS 200V 200V 200V RDS(on) 0.075Ω 0.075Ω 0.075Ω ID 30A 30A 30A PTOT 125W 125W 125W TO-247 1 3 2 1 3 1 2 Gate charge minimized 100% avalanche tested Excellent figure of merit (RDS*Qg) Very good manuf |
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Panasonic Semiconductor |
Aluminum Electrolytic Capacitors ith maximum specified ripple current (see page 4) *2000 hours for 20mm length sizes **Use of temperature ripple current multipliers may limit life to the hours specified for the maximum operating temperature. Part Number System E C A B Series Code C |
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STMicroelectronics |
N-channel MOSFET Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 VDSS@ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω ID 1 3 3 1 2 24 A 24 A(1) 24 A 24 A 24 A 3 12 D²PAK TO-220FP I²PAK 1. Lim |
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STMicroelectronics |
N-Channel Power MOSFET Order code VDS @ TJMAX RDS(on ) max. STB31N65M5 STF31N65M5 STP31N65M5 710 V 0.148 Ω STW31N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested ID 22 A Package D2PAK |
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STMicroelectronics |
N-channel MOSFET Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P ■ The world’s best RDS(on) in TO-220 amongst teth |
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Jingdao Microelectronics |
3A SURFACE MOUNT SCHOTTKY BRIDGE • Reverse Voltage - 40 to 200 V • Forward Current - 3 A • High Surge Current Capability • Designed for Surface Mount Application MECHANICAL DATA • Case: ABS/LBF • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 88mg 0.0031oz PI |
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Jingdao Microelectronics |
3A SURFACE MOUNT SCHOTTKY BRIDGE • Reverse Voltage - 40 to 200 V • Forward Current - 3 A • High Surge Current Capability • Designed for Surface Mount Application MECHANICAL DATA • Case: ABS/LBF • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 88mg 0.0031oz PI |
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ON Semiconductor |
IGBT a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant ap |
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Token |
Ceramic Resonators : Oscillating circuits requiring no adjustment can be designed by utilizing these resonators in conjunction with transistors or appropriate ICs. The ZTB series is stable over a wide temperature range and with respect to long-term aging. Miniatu |
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Token |
Ceramic Resonators : Oscillating circuits requiring no adjustment can be designed by utilizing these resonators in conjunction with transistors or appropriate ICs. The ZTB series is stable over a wide temperature range and with respect to long-term aging. Miniatu |
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Siemens Semiconductor Group |
Miniature Printed Circuit Board Relays/ Sockets and Accessories • SPST through DPDT contact arrangements. • Immersion cleanable and flux tight versions available. • VDE 10mm spacing, 5kV dielectric, coil to contacts. • UL Class F coil insulation system. • Conforms to UL 508, 1873, 353 and 1950. • Low profile; 15. |
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ON Semiconductor |
IGBT a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switch |
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Toshiba Semiconductor |
PLL FREQUENCY SYNTHESIZER |
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Toshiba Semiconductor |
RF 1CHIP IC FOR 900Mhz CORDLESS TELEPHONE taSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U |
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ON Semiconductor |
Power MOSFET ce Avalanche Energy – Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH IL(pk) = 26 A, VDS = 60 Vdc) Thermal Resistance – Junction –to –Case Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR 1 M |
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Desde 2024. D4U Semiconductor.
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