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NGTB30N140IHR3WG |
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| Part Number | NGTB30N140IHR3WG |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | IGBT with Monolithic Free Wheeling Diode NGTB30N140IHR3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ultra Field Stop (FS) Trench construction and provides sup... |
| Features |
a robust and cost effective ultra Field Stop (FS) Trench construction and provides superior performance. It is especially designed for low on−state and is well suited for resonant or soft switching topologies, such as those used in inductive heating applications. The device contains a reverse conducting diode integrated on the same die, which makes the device construction very cost effective.
Features
• Extremely Efficient Trench with Ultra Field Stop Technology • 1400 V Breakdown Voltage • Optimized for Low Losses in IH Cooker Application • Reliable and Cost Effective Single Die Solution • Th... |
| Document |
 NGTB30N140IHR3WG Data Sheet
PDF 261.60KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NGTB30N120FL2WG |
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IGBT |
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| 2 | NGTB30N120IHLWG |
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| 3 | NGTB30N120IHRWG |
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IGBT |
|
| 4 | NGTB30N120IHSWG |
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IGBT |
|
| 5 | NGTB30N120L2WG |
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IGBT |
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| 6 | NGTB30N120LWG |
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IGBT |
|
Desde 2024. D4U Semiconductor.
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