| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
Diode ings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failu |
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SEC |
CMOS Omnipolar High Sensitivity Micropower Hall Switch − Micropower consumption for battery powered applications − Omnipolar, output switches with absolute value of North or South pole from magnet − Operation down to 2.5V − High sensitivity for direct reed switch replacement applications 3 pin SOT23 (su |
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Toshiba Semiconductor |
Silicon Diode emperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individu |
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F.E.C. Semiconductor |
3.0A Surface Mount Schottky Rectifier The plastic package carries Underwriters Laboratory flammability classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High forward surge current capability High temperature soldering guaranteed : 25 |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode ture/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual rel |
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ON Semiconductor |
Schottky Rectifier • Metal to Silicon Rectifiers, Majority Carrier Conduction • Low−Forward Voltage Drop • Easy Pick and Place • High−Surge Current Capability • This Device is Pb−Free and Halide Free DATA SHEET www.onsemi.com 1 Cathode 2 Anode SMC CASE 403AG MARKI |
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Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrie Diode te maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and e |
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Taiwan Semiconductor |
Surface Mount Schottky Barrier Rectifier ● Low power loss, high efficiency ● Ideal for automated placement ● Guard ring for over-voltage protection ● High surge current capability ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 6 |
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China Semiconductor |
Numeric / Alphanumeric Display |
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Jingdao Microelectronics |
Surface Mount Schottky Barrier Rectifier • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Toshiba Semiconductor |
Diode e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability t |
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Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Chara |
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Toshiba Semiconductor |
Silicon diode esign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). |
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Toshiba Semiconductor |
Silicon Diode within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability |
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Micro Electronics |
NPN SILICON TRANSISTOR |
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MIC |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS ͈Metal silicon junction, majority carrier conduction ͈ For surface mounted applications ͈ Low power loss, high efficiency ͈High forward surge current capability ͈ For use in low voltage, high frequency inverters, free wheeling, and polarity protectio |
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NEC |
Micro power Built-in IC ultra-minimum MR sensor *Micro power (15µW(typ):Vcc=3V) and High-sensitivity(2mT(typ)) (suited for battery-operation) *Ultra-small size MR(Magneto-resistance)sensor * Volume and mounting area are 50% smaller than MRSS22L. * Height is about 4mm lower than MRSS22L. *Operating |
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ON Semiconductor |
Schottky Rectifier • Metal to Silicon Rectifiers, Majority Carrier Conduction • Low−Forward Voltage Drop • Easy Pick and Place • High−Surge Current Capability • This Device is Pb−Free and Halide Free DATA SHEET www.onsemi.com 1 Cathode 2 Anode SMC CASE 403AG MARKI |
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General Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Low profile package ♦ Built-in strain relief, ideal for automated placement ♦ Easy pick and place ♦ Metal silicon junction, majority ca |
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Mitsubishi Electric Semiconductor |
Dual-In-Line Package Intelligent Power Module ) DIPIPM HVIC1 IGBT1 Di1 HO P(37) U(36) VVFS(7) VVFB(9) VP1(10) VP(12) HVIC2 IGBT2 Di2 HO V(35) VWFS(13) VWFB(15) VP1(16) W P(18) HO HVIC3 IGBT3 Di3 W(34) IGBT4 LVIC Di4 UOUT VOT(20) UN(21) NU(33) IGBT5 Di5 VOUT VN(22) W N(23) FO(24) IGBT6 |
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Desde 2024. D4U Semiconductor.
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