| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
|
|
|
|
Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
|
|
|
|
ST Microelectronics |
SMALL SIGNAL NPN TRANSISTOR nt Thermal Resistance Junction-Case Max Max 250 83.3 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 |
|
|
|
|
ON Semiconductor |
Small Signal Switching Transistor • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dis |
|
|
|
|
STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
|
|
|
|
ON Semiconductor |
Small Signal Diode and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel DATA SHEET www.onsemi.com DO−35 Cathode is denoted with a black band Cathode Band SOD80 LL−34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO TH |
|
|
|
|
Taiwan Semiconductor |
NPN Small Signal Transistor - Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor (see equivalent circuit). - The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of th |
|
|
|
|
Microne |
ULTRA-SMALL PACKAGE PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR Low voltage operation: Start-up is guaranteed from 0.9V(IOUT =1 mA ) Duty ratio: Built-in PWM/PFM switching control circuit 15 to 78 % . oscillator frequency 1.0MHz Output voltage range: 1.5V ~62.50 V Output voltage accuracy ±2% Soft start function: |
|
|
|
|
ON Semiconductor |
Small Signal MOSFET • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Drain Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Total Pow |
|
|
|
|
STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K NC A NC K A K2 K1 A K2 A K1 BAT54W DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD pack |
|
|
|
|
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX Collector Cut-off Current (VBE = -3 V) IBEX Base Cut-off Current (VBE = -3 V) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) |
|
|
|
|
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
|
|
|
|
Taiwan Semiconductor |
PNP Small Signal Transistor ◇ Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor (see equivalent circuit). ◇ The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of th |
|
|
|
|
Central Semiconductor Corp |
Small Signal Transistors 0 0.5 50 50 4,000 150 2,000 2,000 2,000 150 150 30 30 10 10 5.0 5.0 5.0 5.0 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 2.0 10 10 10 1.0 1.0 1.0 5.0 5.0 10 10 2.0 10 2.0 2.0 2.0 10 10 10 10 10 10 MAX 0.50 0.50 0.50 0.50 0.65 1.40 0.75 0.95 0.60 0. |
|
|
|
|
Microchip |
Small Footprint RMII 10/100 Ethernet Transceiver - Ability to use a low cost 25Mhz crystal for reduced BOM • Packaging - 24-pin QFN/SQFN (4x4 mm) Lead-Free RoHS Compliant package with RMII • Environmental - Extended commercial temperature range (0°C to +85°C) - Industrial temperature range version |
|
|
|
|
STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
|
|
|
|
MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.0V to 440V. ▪ Peak power dissipation 400W @10 x 1000 us Pulse ▪ Low profile package. ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-directi |
|
|
|
|
MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS ▪ Working peak reverse voltage range – 5.0V to 440V. ▪ Peak power dissipation 400W @10 x 1000 us Pulse ▪ Low profile package. ▪ Excellent clamping capability. ▪ Glass passivated junction. ▪ Fast response time: typically less than 1 ns for Uni-directi |
|
|
|
|
ST Microelectronics |
SMALL SIGNAL PNP TRANSISTORS ance Junction-Ambient Max Max 58.3 292 TO -18 97.3 437.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEX I BEX Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.5 |
|
|
|
|
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS TRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = 30 V V CE = 30 V I C = 10 µ A T amb = 150 o C 50 Min. Typ . Max. 15 5 Un it nA µA V V (BR)CES ∗ Col |
|
Desde 2024. D4U Semiconductor.
|