| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Dynex Semiconductor |
Fast Recovery Diode s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DSF20545SF45 4500 DSF20545SF44 4400 DSF20545SF43 4300 DSF20545SF42 4200 DSF20545SF41 4100 DSF20545SF40 |
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Dynex Semiconductor |
Fast Recovery Diode s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 3500 3400 3200 3000 Conditions DSF21035SV35 DSF21035SV34 DSF21035SV32 DSF21035SV30 VRSM = VRRM + 100V Lower vol |
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Micron |
DDR4 SDRAM UDIMM DDR4 SDRAM UDIMM MTA18ASF2G72AZ – 16GB Features • DDR4 functionality and operations supported as defined in the component data sheet • 288-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC4-3200, PC4-2666, or PC4-2400 |
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Dynex Semiconductor |
Fast Recovery Diode esistive load Tcase= 65°C Tcase= 65°C -Tcase= 65°C -- SURGE RATINGS Symbol Parameter IFSM Surge (non-repetitive) on-state current I2t I2t for fusing IFSM Surge (non-repetitive) on-state current I2t I2t for fusing Test Conditions 10ms half |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed: 260°C / 10 seconds at te |
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ON Semiconductor |
Automotive Dual Side Cooling Half-Bridge Power Module |
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Dynex Semiconductor |
Fast Recovery Diode s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DSF20545SF45 4500 DSF20545SF44 4400 DSF20545SF43 4300 DSF20545SF42 4200 DSF20545SF41 4100 DSF20545SF40 |
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Silikron Semiconductor |
MOSFET ● VDS = -20V,ID = -3A RDS(ON) < 115mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management S Schematic |
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Freescale Semiconductor |
Microcontroller • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 85°C • Performance – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per |
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Dynex Semiconductor |
Fast Recovery Diode s Double Side Cooling. s High Surge Capability. s Low Recovery Charge. VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 6000 5900 5800 5700 5600 5500 Conditions DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DSF2 |
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Super Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.16 • Ultra Low Gate Charge (typ. Qg = 70nC) • 100% avalanche tested D GDS TO-220 GD S TO-220F G S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 135NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Micro Commercial Components |
2.0 Amp Super Fast Rectifier 50 to 400 Volts High reliability High current capability Low forward voltage drop High surge capability omponents 21201 Itasca Street Chatsworth !"# $ % !"# SF21 THRU SF26 2.0 Amp Super Fast Rectifier 5 |
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Silikron Semiconductor Co |
Battery protection ● VDS = 20V,ID = 4.5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●P |
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Silikron Semiconductor Co |
Battery protection ● VDS = -20V,ID =-4A RDS(ON) < 73mΩ @ VGS=-1.8V RDS(ON) < 54mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.5V ESD Rating：3000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking |
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Silikron Semiconductor Co |
Battery protection ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery prot |
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Silikron Semiconductor Co |
PWM applications ● VDS = -20V,ID = -5A RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 60mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package S Schematic diagram Pin Assignment Application ●PWM applications ●Load |
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Micon |
DDR3 SDRAM RDIMM DDR3 SDRAM RDIMM MT36JSF2G72PZ – 16GB Features • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC3-14900, PC3-12800, PC3-10600, |
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Freescale Semiconductor |
Microcontroller • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 85°C • Performance – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per |
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Desde 2024. D4U Semiconductor.
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