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TSF20H100C |
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| Part Number | TSF20H100C |
| Manufacturer | Taiwan Semiconductor |
| Description | RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 1 FORWARD CURRENT DERATING CURVE 30 25 TSF20H100C 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG.... |
| Features |
- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
ITO-220AB
MECHANICAL DATA
Case : ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity : As marked Mounting torque : 5 in-lbs. max. Weight：1.7 gram (approx... |
| Document |
 TSF20H100C Data Sheet
PDF 225.29KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | TSF20H120C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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| 2 | TSF20H120C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier |
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| 3 | TSF20H150C |
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Trench MOS Barrier Schottky Rectifier |
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| 4 | TSF204D00-S1 |
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| 5 | TSF2080C |
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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| 6 | TSF20L100C |
INCHANGE |
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| 7 | TSF20L120C |
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Trench Schottky Rectifier |
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| 8 | TSF20L150C |
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Trench Schottky Rectifier |
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| 9 | TSF20L200C |
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| 10 | TSF20N50M |
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Desde 2024. D4U Semiconductor.
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