| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Thinki Semiconductor |
10.0 Ampere Dual Common Cathode Super Fast Recovery Rectifier Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and |
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Hynix Semiconductor |
HY62SF16101C Series 64Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) -. 1.2V(min) data retention • Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62SF16101C 1.7~2.3 85/100/120 H |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 135NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Toshiba Semiconductor |
SILICON PLANAR TYPE THYRISTOR Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB SC−46 13−10G1B 1 2001-07-10 www.DataSheet4U.com SF10G41A,SF |
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Hynix Semiconductor |
HY62SF16101C Series 64Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) -. 1.2V(min) data retention • Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62SF16101C 1.7~2.3 85/100/120 H |
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Sanyo Semicon Device |
1.0A Power Rectifier |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current |
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Rectron Semiconductor |
GLASS PASSIVATED SUPER FAST RECTIFIER * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * Super fast switching speed * High reliability * Good for switching mode circuit MECHANICAL DATA * Case:TO-220 molded plastic * Epoxy: Device has UL |
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Rectron Semiconductor |
GLASS PASSIVATED SUPER FAST RECTIFIER * * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability Super fast switching speed High reliability Good for switching mode circuit .05 (1.27 REF.) D2PAK MECHANICAL DATA * * * * * Case: D2PAK molded |
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Hynix Semiconductor |
256Kx16bit full CMOS SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 48-ball uBGA Product No. Voltage (V) Speed (ns) 85 Operation Current/Icc(mA) 3 HY62SF1 |
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Silikron Semiconductor Co |
Power switching application ry voltage Operating Junction and Storage Temperature Range Max. 75 65 300 227 1.5 ±20 380 TBD 31 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Sour |
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Taiwan Semiconductor |
Glass Passivated Super Fast Rectifiers ● AEC-Q101 qualified available ● High efficiency, low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converters ● Switching mode conver |
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Taiwan Semiconductor |
1.0 AMP. Super Fast Rectifiers High efficiency, low VF High current capability High reliability High surge current capability Low power loss. For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Mechanical Data Cases: Molded plastic E |
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Micron Technology |
1.35V DDR3L SDRAM RDIMM 1.35V DDR3L SDRAM RDIMM MT18KSF51272PDZ – 4GB MT18KSF1G72PDZ – 8GB Features • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC |
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Freescale Semiconductor |
Microcontroller • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 85°C • Clocks – 3 to 32 MHz crystal oscillator – 32 kHz crystal oscillator – Multi-purpose clock generator • S |
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Freescale Semiconductor |
Microcontroller • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 85°C • Clocks – 3 to 32 MHz crystal oscillator – 32 kHz crystal oscillator – Multi-purpose clock generator • S |
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Sanyo Semicon Device |
1.0A Power Rectifier |
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Rectron Semiconductor |
GLASS PASSIVATED SUPER FAST RECTIFIER * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * Super fast switching speed * High reliability * Good for switching mode circuit MECHANICAL DATA * Case:TO-220 molded plastic * Epoxy: Device has UL |
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Thinki Semiconductor |
600V Insulated N-Channel Type Power MOSFET ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A General Description This N-cha |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 135NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Desde 2024. D4U Semiconductor.
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