SSF1016 |
Part Number | SSF1016 |
Manufacturer | SilikrON Semiconductor (https://www.onsemi.com/) Co |
Description | The SSF1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatabi... |
Features |
ry voltage Operating Junction and Storage Temperature Range Max. 75 65 300 227 1.5 ±20 380 TBD 31 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 100 — 2.0 — — — — 2009.8.10 Typ. — 11 — — — — — Max. Units — 16 4.0 2 10 100 -100 V V Test Conditions VGS=0V,ID=250μA VDS=VGS,ID=250μA VDS=100V,VGS=0V mΩ VGS=... |
Document |
SSF1016 Data Sheet
PDF 356.21KB |
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