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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 150 mA, VGS(Peak) = -5.5 V, ƒ = 2020 MHz, 3GPP W |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA, VGS(PEAK) = -5.8 V, ƒ = 2020 MHz, 3 |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT high efficiency, and a thermally-enhanced package with earless flange. Package Type: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP W |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT internal matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VCC = 48 V, IDQ = 150 mA, VGS(PEAK) = –5.6 V, ƒ = 269 |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 250 mA, VGS(Peak) = -5 V, ƒ = 4000 MHz, 3GPP WCD |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248KC-6/2 PN: GTRB266908FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 1000 mA, VGS(Peak) = -4.7 V, ƒ |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 750 mA, VGS(PEAK) = -5.15 V, ƒ = 2200 MHz, 3GPP WCD |
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Desde 2024. D4U Semiconductor.
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