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GTRB424908FC |
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| Part Number | GTRB424908FC |
| Manufacturer | MACOM |
| Description | The GTRB424908FC/1 is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a... |
| Features |
high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(Main) = 250 mA, VGS(Peak) = -5 V,
ƒ = 4000 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
40 35 30 25 20 15 10
5 0
25
80
60
Efficiency
40
20
0
Gain -20
-40
PAR @ 0.01% CCDF 30 35 40 45
-60
gtrb424908fc_g1
-80
50 55
Average Output Power (dBm)
Features
• GaN on SiC HEMT technology • Typical Pulsed CW performance, 3800 MHz, 48 V, 100 µs pulse width, 10% duty cycle, combined outputs - Outpu... |
| Document |
 GTRB424908FC Data Sheet
PDF 833.42KB |
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Desde 2024. D4U Semiconductor.
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