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GTRB206002FC |
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| Part Number | GTRB206002FC |
| Manufacturer | MACOM |
| Description | The GTRB206002FC/1 is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange. GTRB206002FC/1 Package H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up. |
| Features |
high efficiency, and a thermally-enhanced package with earless flange.
GTRB206002FC/1 Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 600 mA,
VGS(PEAK) = -5.8 V, ƒ = 2020 MHz, 3GPP
WCDMA signal, PAR = 10 dB, 3.84 MHz BW
32 28 24 20 16 12
8 4 0
27
80
Efficiency
60
40
Gain
20
0
-20
-40
PAR @ 0.01% CCDF
-60
gtrb206002fc_g1
-80
32 37 42 47 52 57
Average Output Power (dBm)
Features
• GaN on SiC HEMT technology • Typical Pulsed CW performance, 2020 MHz, 48 V, 10 µs pulse width, 10% duty cycle, combined outputs . |
| Datasheet |
 GTRB206002FC Data Sheet
PDF 695.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GTRB204402FC |
MACOM |
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| 2 | GTRB224402FC |
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| 3 | GTRB264318FC |
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| 4 | GTRB266908FC |
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| 5 | GTRB267008FC |
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| 6 | GTRB424908FC |
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| 7 | GTR210 |
ADOS |
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| 8 | GTRA184602FC |
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| 9 | GTRA262802FC |
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| 10 | GTRA263902FC |
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|
Desde 2024. D4U Semiconductor.
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