No. | parte # | Fabricante | Descripción | Hoja de Datos |
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MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
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MA-COM |
Radar Pulsed Power Transistor • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance m |
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MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
|
|
|
MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
|
|
|
MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
|
|
|
MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
|
|
|
MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
|
|
|
MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
|
|
|
MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
|
|
|
MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
|
|
|
MA-COM |
Radar Pulsed Power Transistor NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance m |
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|
MA-COM |
Packaged PIN Diodes ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications Rev V.9 Maximum Power Dissipation Cathode |
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MA-COM |
Packaged PIN Diodes ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications Rev V.9 Maximum Power Dissipation Cathode |
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MA-COM |
Packaged PIN Diodes ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications Rev V.9 Maximum Power Dissipation Cathode |
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|
MA-COM |
Packaged PIN Diodes ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications Rev V.9 Maximum Power Dissipation Cathode |
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|
MA-COM |
Packaged PIN Diodes ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications Rev V.9 Maximum Power Dissipation Cathode |
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