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PH2729-110M |
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| Part Number | PH2729-110M |
| Manufacturer | MA-COM |
| Description | PH2729-110M Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High e... |
| Features |
NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 63 3.0 8.0 330 -65 to +200 200 Units V ... |
| Document |
 PH2729-110M Data Sheet
PDF 627.62KB |
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Desde 2024. D4U Semiconductor.
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